裕隆時(shí)代向用戶提供專業(yè)的的電子束吸收電流分析系統(tǒng)EBAC/RCI。
EBAC/RCI電子束吸收電流分析系統(tǒng)，能夠方便快速的定位半導(dǎo)體芯片電路中的短路及失效點(diǎn)位置，不但可以對(duì)同層電路，而且可以對(duì)次表層，甚至表層下第三層、第四層電路進(jìn)行失效點(diǎn)的定位，因此能夠?qū)Π雽?dǎo)體芯片電路或相關(guān)材料進(jìn)行快速準(zhǔn)確的失效分析。
目前，集成電路芯片設(shè)計(jì)越來(lái)越復(fù)雜，關(guān)鍵尺寸和金屬連線線寬越來(lái)越小，傳統(tǒng)的失效點(diǎn)定位方法，如微光顯微鏡或光束又到電阻變化鞥，由于其分辨率不足，導(dǎo)致不能精確地定位電路故障點(diǎn)位置，電壓襯度方法雖然在一些開路短路失效分析中能快速地定位失效點(diǎn)，但只是局限于電路同層分析。
EBAC/RCI電子束吸收電流分析系統(tǒng)是基于掃描電鏡的分析系統(tǒng)，在保留掃描電鏡高分辨率的前提下，能夠?qū)ν瑢有酒娐愤M(jìn)行高定位，同時(shí)能夠?qū)Υ伪韺由踔帘砻嫦碌谌?、第四層電路進(jìn)行失效點(diǎn)定位，因此越來(lái)越多的應(yīng)用于先進(jìn)制程芯片的失效分析。在涉及多層金屬層的失效定位分析時(shí)，EBAC/RCI方法更加簡(jiǎn)便精確，可保證分析的成功率，并縮短分析周期。
EBAC/RCI acquisitionThe lowest noise Electron Beam Absorbed Current (EBAC)and Resistive Contrast Imaging (RCI)
Find exact location of any open,resistive or shorting defect
Localize metal line cuts caused by cracking,corrosion, electro-migration, or foreign particles
Identify resistive opens caused by interface contamination at via interconnects
Pinpoint location for direct TEM lamella FIB preparation
Characterize interconnects with highest resolution
Reveal electrical integrity of nets with sub-mciron lateral resolution and bridge from EFA to PFA
Diagnose fabrication and long term issues, including contamination,metal pattering defects, resistive interconnectors, or electro-migration
Directly isolate defects to the exact layer and die location, and improve them to product improvement actions
Verify device operation modes with built-in biasing for voltage contrast
Image bias/voltage contrast in delayered devices
Monitor operation of devices under bias
Compare imaged behaviour with device design
Localize defects in thin dielectric layers
Visualise and localise weaknesses in gate oxide (GOX) and capacitor oxide (COX) before breakdown
Pinpoint oxides shorts caused by ESD or EOS with sub-micron resolution
Preserve the original defect signature with power dissipation in the lower nW range during localization
Access failures invisible in voltage contrast
Find low resistances that allow charge tunneling trough the interconnects
Investigate structures in contact with the silicon substrate
Characterize large metal structures
